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supplement publication# 21258 rev: e amendment/ +2 issue date: june 14, 1999 am29f400b known good die 4 megabit (512 k x 8-bit/256 k x 16-bit) cmos 5.0 volt-only, boot sector flash memorydie revision 2 distinctive characteristics n single power supply operation 5.0 volt-only operation for read, erase, and program operations minimizes system level requirements n manufactured on 0.32 m process technology compatible with 0.5 m am29f400 device n high performance acess time as fast as 70 ns n low power consumption (typical values at 5mhz) 1 a standby mode current 20 ma read current (byte mode) 28 ma read current (word mode) 30 ma program/erase current n flexible sector architecture one 16 kbyte, two 8 kbyte, one 32 kbyte, and seven 64 kbyte sectors (byte mode) one 8 kword, two 4 kword, one 16 kword, and seven 32 kword sectors (word mode) supports full chip erase sector protection features: a hardware method of locking a sector to prevent any program or erase operations within that sector sectors can be locked via programming equipment temporary sector unprotect feature allows code changes in previously locked sectors n top or bottom boot block configurations available n embedded algorithms embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors embedded program algorithm automatically writes and verifies data at specified addresses n minimum 1,000,000 write cycle per sector guaranteed n compatibility with jedec standards pinout and software compatible with single- power-supply flash superior inadvertent write protection n data# polling and toggle bits provides a software method of detecting program or erase operation completion n ready/busy# pin (ry/by#) provides a hardware method of detecting program or erase cycle completion n erase suspend/erase resume suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation n hardware reset pin (reset#) hardware method to reset the device to reading array data n 20-year data retention at 125 c n tested to datasheet specifications at temperature n quality and reliability levels equivalent to standard packaged components
2 am29f400b known good die supplement general description the am29f400b in known good die (kgd) form is a 4 mbit, 5.0 volt-only flash memory. amd defines kgd as standard product in die form, tested for functionality and speed. amd kgd products have the same reli- ability and quality as amd products in packaged form. am29f400b features the am29f400b is a 4 mbit, 5.0 volt-only flash memory organized as 524,288 bytes or 262,144 words. the word-wide data (x16) appears on dq15Cdq0; the byte-wide (x8) data appears on dq7Cdq0. this device is designed to be programmed in-system with the stan- dard system 5.0 volt v cc supply. a 12.0 v v pp is not required for write or erase operations. the device can also be programmed in standard eprom programmers. this device is manufactured using amds 0.32 m process technology, and offers all the features and ben- efits of the am29f400, which was manufactured using 0.5 m process technology. to eliminate bus contention the device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. the device requires only a single 5.0 volt power sup- ply for both read and write functions. internally gener- ated and regulated voltages are provided for the program and erase operations. the device is entirely command set compatible with the jedec single-power-supply flash standard . com- mands are written to the command register using stan- dard microprocessor write timings. register contents serve as input to an internal state-machine that con- trols the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithman internal algorithm that auto- matically times the program pulse widths and verifies proper cell margin. device erasure occurs by executing the erase com- mand sequence. this initiates the embedded erase algorithman internal algorithm that automatically preprograms the array (if it is not already pro- grammed) before executing the erase operation. dur- ing erase, the device automatically times the erase pulse widths and verifies proper cell margin. the host system can detect whether a program or erase operation is complete by observing the ry/by# pin, or by reading the dq7 (data# polling) and dq6 (toggle) status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write opera- tions during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of the sectors of mem- ory. this can be achieved via programming equipment. the erase suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the reset# pin may be tied to the system reset circuitry. a system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the flash memory. the system can place the device into the standby mode . power consumption is greatly reduced in this mode. amds flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. the device electrically erases all b its within a se cto r simultaneously via fowler-nordheim tunneling. the data is programmed using hot electron injection. electrical specifications refer to the am29f400b data sheet, document number 21505, for full electrical specifications on the am29f400b in kgd form.
am29f400b known good die 3 supplement product selector guide die photograph die pad locations family part number am29f400b kgd speed option v cc = 5.0 v 5% -75 v cc = 5.0 v 10% -90 -120 max access time, ns (t acc )7090120 max ce# access time, ns (t ce )7090120 max oe# access time, ns (t oe )303550 2 3 4 5 6 7 8 9 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 amd logo location 35 37 38 39 40 41 42 43 136 10 11 12 32 33 34 30 31
4 am29f400b known good die supplement pad description note: the coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment. pad signal pad center (mils) pad center (millimeters) xyxy 1v cc 0.00 0.00 0.0000 0.0000 2 dq4 6.87 0.00 0.1745 0.0000 3 dq12 12.78 0.00 0.3246 0.0000 4 dq5 18.62 0.00 0.4729 0.0000 5 dq13 24.53 0.00 0.6231 0.0000 6 dq6 30.37 0.00 0.7714 0.0000 7 dq14 36.29 0.00 0.9218 0.0000 8 dq7 42.12 0.00 1.0698 0.0000 9 dq15/a-1 48.04 0.00 1.2202 0.0000 10 v ss 55.68 C1.35 1.4143 C0.0343 11 byte# 57.48 6.50 1.4600 0.1651 12 a16 57.48 18.04 1.4600 0.4582 13 a15 57.13 172.01 1.4511 4.3691 14 a14 51.29 172.01 1.3028 4.3691 15 a13 45.87 172.01 1.1651 4.3691 16 a12 40.04 172.01 1.0170 4.3691 17 a11 34.61 172.01 0.8791 4.3691 18 a10 28.78 172.01 0.7310 4.3691 19 a9 23.36 171.76 0.5933 4.3627 20 a8 17.43 172.01 0.4427 4.3691 21 we# 12.00 172.01 0.3048 4.3691 22 reset# 2.42 175.78 0.0615 4.4648 23 ry/by# C9.49 175.78 C0.2411 4.4648 24 a17 C24.48 172.01 C0.6218 4.3691 25 a7 C30.32 172.01 C0.7701 4.3691 26 a6 C35.74 172.01 C0.9078 4.3691 27 a5 C41.57 172.01 C1.0559 4.3691 28 a4 C47.00 172.01 C1.1938 4.3691 29 a3 C52.83 172.01 C1.3419 4.3691 30 a2 C58.25 172.01 C1.4796 4.3691 31 a1 C64.09 172.01 C1.6279 4.3691 32 a0 C64.44 18.04 C1.6368 0.4582 33 ce# C64.44 6.50 C1.6368 0.1651 34 v ss C64.44 C3.79 C1.6368 C0.0962 35 oe# C54.94 C2.27 C1.3955 C0.0576 36 dq0 C47.36 0.00 C1.2030 0.0000 37 dq8 C41.45 0.00 C1.0528 0.0000 38 dq1 C35.61 0.00 C0.9045 0.0000 39 dq9 C29.69 0.00 C0.7541 0.0000 40 dq2 C23.86 0.00 C0.6061 0.0000 41 dq10 C17.94 0.00 C0.4557 0.0000 42 dq3 C12.11 0.00 C0.3076 0.0000 43 dq11 C6.19 0.00 C0.1572 0.0000
am29f400b known good die 5 supplement ordering information standard products amd standard products are available in several packages and operating ranges. the order number (valid combination) is formed by a combination of the following: valid combinations valid combinations list configurations planned to be sup- ported in volume for this device. consult the local amd sales office to confirm availability of specific valid combinations and to check on newly released combinations. am29f400b device number/description am29f400b known good die 4 megabit (512 k x 8-bit/256 k x 16-bit) cmos flash memorydie revision 1 5.0 volt-only program and erase -75 speed option see valid combinations package type and minimum order quantity dp = waffle pack 140 die per 5 tray stack dg = gel-pak ? die tray 594 die per 6 tray stack dt = surftape? (tape and reel) 2500 per 7-inch reel dw = gel-pak ? wafer tray (sawn wafer on frame) call amd sales office for minimum order quantity temperature range c = commercial (0 c to +70 c) i= industrial (C40 c to +85 c) e = extended (C55 c to +125 c) dp c 1 die revision this number refers to the specific amd manufacturing process and product technology reflected in this document. it is entered in the revision field of amd standard product nomenclature. t boot code sector architecture t = top sector b = bottom sector valid combinations am29f400bt-75 am29f400bb-75 dpc 1, dpi 1, dpe 1, dgc 1, dgi 1, dge 1, dtc 1, dti 1, dte 1, dwc 1, dwi 1, dwe 1 am29f400bt-90 am29f400bb-90 am29f400bt-120 am29f400bb-120
6 am29f400b known good die supplement packaging information surftape packaging gel-pak and waffle pack packaging direction of feed orientation relative to leading edge of tape and reel amd logo location 12 mm orientation relative to top left corner of gel-pak and waffle pack cavity plate amd logo location
am29f400b known good die 7 supplement product test flow figure 1 provides an overview of amds known good die test flow. for more detailed information, refer to the am29f400b product qualification database supple- ment for kgd. amd implements quality assurance pro- cedures throughout the product test flow. in addition, an off-line quality monitoring program (qmp) further guarantees amd quality standards are met on known good die products. these qa procedures also allow amd to produce kgd products without requiring or implementing burn-in. figure 1. amd kgd product test flow wafer sort 1 bake 24 hours at 250 c wafer sort 2 wafer sort 3 high temperature packaging for shipment shipment dc parameters functionality programmability erasability data retention dc parameters functionality programmability erasability dc parameters functionality programmability erasability speed incoming inspection wafer saw die separation 100% visual inspection die pack
8 am29f400b known good die supplement physical specifications die dimensions . . . . . . . . . . . . . . 135 mils x 198 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.42 mm x 5.02 mm die thickness. . . . . . . . . . . . . . . . . ~500 m/~20 mils bond pad size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils . . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 m x 115.9 m pad area free of passivation . . . . . . . . . 13.98 mils 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 m 2 pads per die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43 bond pad metallization . . . . . . . . . . . . . . . . . . . al/cu die backside . . . . . . . . . . . . . . . . . . . . . . . . no metal, . . . . . . . . . . . . . . . . . . . . may be grounded (optional) passivation . . . . . . . . . . . . . . . . . . . . . . sin/sog/sin dc operating conditions v cc (supply voltage) . . . . . . . . . . . . . . . 4.5 v to 5.5 v junction temperature under bias . . t j (max) = 130 c operating temperature commercial . . . . . . . . . . . . . . . . . . . 0 c to +70 c industrial . . . . . . . . . . . . . . . . . . . C40 c to +85 c extended . . . . . . . . . . . . . . . . . . C55 c to +125 c manufacturing information manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . fasl test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . sdc manufacturing id (top boot) . . . . . . . . . . . . 98f02ak (bottom boot) . . . . . . . 98f02abk preparation for shipment . . . . . . . . penang, malaysia fabrication process . . . . . . . . . . . . . . . . . . . . cs39s die revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 special handling instructions processing do not expose kgd products to ultraviolet light or process them at temperatures greater than 250 c. failure to adhere to these handling instructions will result in irreparable damage to the devices. for best yield, amd recommends assembly in a class 10k clean room with 30% to 60% relative humidity. storage store at a maximum temperature of 30 c in a nitrogen- purged cabinet or vacuum-sealed bag. observe all standard esd handling procedures.
am29f400b known good die 9 supplement terms and conditions of sale for amd non-volatile memory die all transactions relating to unpackaged die under this agreement shall be subject to amds standard terms and conditions of sale, or any revisions thereof, which revisions amd reserves the right to make at any time and from time to time. in the event of conflict between the provisions of amds standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. amd warrants unpackaged die of its manufacture (known good die or die) against defective mate- rials or workmanship for a period of one (1) year from date of shipment. this warranty does not extend beyond the first purchaser of said die. buyer assumes full responsibility to ensure compliance with the appropriate handling, assembly and processing of known good die (including but not limited to proper die preparation, die attach, wire bonding and related assembly and test activities), and compliance with all guidelines set forth in amds specifications for known good die, and amd assumes no responsibility for envi- ronmental effects on known good die or for any activity of buyer or a third party that damages the die due to improper use, abuse, negligence, improper installation, accident, loss, damage in transit, or unau- thorized repair or alteration by a person or entity other than amd (warranty exclusions). the liability of amd under this warranty is limited, at amds option, solely to repair the die, to send replace- ment die, or to make an appropriate credit adjustment or refund in an amount not to exceed the original pur- chase price actually paid for the die returned to amd, provided that: (a) amd is promptly notified by buyer in writing during the applicable warranty period of any defect or nonconformity in the known good die; (b) buyer obtains authorization from amd to return the defective die; (c) the defective die is returned to amd by buyer in accordance with amds shipping instruc- tions set forth below; and (d) buyer shows to amds satisfaction that such alleged defect or nonconformity actually exists and was not caused by any of the above- referenced warranty exclusions. buyer shall ship such defective die to amd via amds carrier, collect. risk of loss will transfer to amd when the defective die is pro- vided to amds carrier. if buyer fails to adhere to these warranty returns guidelines, buyer shall assume all risk of loss and shall pay for all freight to amds specified location. the aforementioned provisions do not extend the original warranty period of any known good die that has either been repaired or replaced by amd. without limiting the foregoing, except to the extent that amd expressly warrants to buyer in a separate agreement signed by amd, amd makes no warranty with respect to the dies processing of date data, and shall have no liability for damages of any kind, under equity, law, or any other theory, due to the failure of such known good die to process any par- ticular data containing dates, including dates in and after the year 2000, whether or not amd received notice of the possi- bility of such damages. this warranty is expressed in lieu of all other warranties, expressed or implied, including the implied warranty of fitness for a particular purpose, the implied warranty of merchantability and of all other obligations or liabilities on amds part, and it neither assumes nor autho- rizes any other person to assume for amd any other liabilities. the foregoing constitutes the buyers sole and exclu- sive remedy for the furnishing of defec- tive or non conforming known good die and amd shall not in any event be liable for increased manufacturing costs, downtime costs, damages relating to buyers procurement of substitute die (i.e., cost of cover), loss of profits, rev- enues or goodwill, loss of use of or damage to any associated equipment, or any other indirect, incidental, special or consequential damages by reason of the fact that such known good die shall have been determined to be defective or non conforming. buyer agrees that it will make no warranty representa- tions to its customers which exceed those given by amd to buyer unless and until buyer shall agree to indemnify amd in writing for any claims which exceed amds warranty. known good die are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of the die can reason- ably be expected to result in a personal injury. buyers use of known good die for use in life support applica- tions is at buyers own risk and buyer agrees to fully indemnify amd for any damages resulting in such use or sale.
10 am29f400b known good die supplement revision summary revision b formatted to match current template. updated distinc- tive characteristics and general description sections using the current main data sheet. updated for cs39 process technology. revision b+1 distinctive characteristics the minimum guarantee per sector is now 1 million cycles. global added -75 and -90 speed options. pad description corrected coordinates for pads 2, 19, 22, 35, 40, and 42. physical specifications changed die thickness specification to ~20 mils. revision b+2 die pad locations moved amd logo to above pad 23. revision c distinctive characteristics changed manufactured on 0.35 m process technology to manufactured on 0.32 m process technology. general description third paragraph: changed amds 0.35 m process technology to amds 0.32 m process technology. die photograph replaced with photograph of die revision 2. die pad locations corrected the location of the amd logo to above pad 22 from pad above pad 13. modified figure to match new die photograph. pad description replaced table with new pad coordinates. physical specifications die dimensions: changed to 135 mils x 198 mils, 3.43 mm x 5.03 mm from 141.34 mils x 207.48 mils, 3.59 mm x 5.27 mm. die thickness: added ~500 m. pad area free of passivation: changed to 20.85 mils 2 and 13,433 m 2 from 15.52 mils 2 and 10,000 m 2 . passivation: changed to sin/sog/sin from nitride/ sog/nitride. manufacturing information manufacturing id: changed to 98f02ak (top boot) and 98f02abk (bottom boot) from 98965ak (top boot) and 98965abk (bottom boot). fabrication process: changed to cs39s from cs39. die revision: changed to 2 from 1. revision c+1 page 5, ordering information package type and minimum order quantity : changed waffle pack to 140 die per 5 tray stack from 180 die per 5 tray stack. changed gel-pak ? die tray to 594 die per 6 tray stack from 378 die per 6 tray stack. changed sur- ftape? (tape and reel) to 2500 per 7-inch reel from 1800 per 7-inch reel. page 7, physical specifications die dimensions : changed to 3.42 mm x 5.02 mm from 3.43 mm x 5.03 mm. bond pad size: changed to 4.7 mils x 4.7 mils and 119.7 m x 119.7 m from 3.74 mils x 3.74 mils and 95 m x 95 m. pad area free of passivation: changed to 13.98 mils 2 and 9,025 um 2 from 20.85 mils 2 and 13,433 m 2 . bond pad metallization : changed to al/cu from al/cu/si. page 7, manufacturing information manufacturing id (top boot) : changed to 98f02ak from 98f02a. revision d global revised document specifications for die shrink from 0.35 m to 0.32 m process technology. terms and conditions replaced warranty with new version. revision e (december 1998) packaging information added section. moved orientation information from die photograph section into this section. revision e+1 (february 1999) die pad locations corrected top row of pad callouts. revision e+2 (june 14, 1999) physical specifications corrected the bond pad dimensions.
am29f400b known good die 11 supplement trademarks copyright ? 1999 advanced micro devices, inc. all rights reserved. amd, the amd logo, and combinations thereof are registered trademarks of advanced micro devices, inc. product names used in this publication are for identification purposes only and may be trademarks of their respective companies .

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